Mid-infrared photovoltaic detector (PD) designed on the base of a type II p-InAs/p-GaSb asymmetric heterostructure with a deep AlSb/InAsSb/AlSb quantum well (QW) at the interface is reported. The heterostructures containing the single QW were grown by LP-MOVPE. Transport, electroluminescent and photoelectrical properties of these structures were investigated. Intense both positive and negative electroluminescence was observed in the spectral range 3-4 µm above room temperature (300-400 K). Spectral response in the mid-infrared range 1.2-3.6 μm was obtained at temperatures T=77-300 K. High quantum efficiency η=0.6-0.7 responsivity S_λ=1.4-1.7 A/W and detectivity D_λ* =3.5×1011 cm Hz^1/2w^-1 were achieved at 77 K. Such QW PDs are suitable for heterodyne spectroscopy and free space communication using quantum cascade lasers as well as for gas analysis and ecological monitoring applications.

Date Published: 18 November 2008
PDF: 6 pages
Proc. SPIE 7138, Photonics, Devices, and Systems IV, 713813 (18 November 2008); doi: 10.1117/12.818007

Published in SPIE Proceedings Vol. 7138:
Photonics, Devices, and Systems IV
Pavel Tománek; Dagmar Senderáková; Miroslav Hrabovský, Editor(s)