
Proceedings Paper
An in-situ monitoring system for characterizing porous silicon growthFormat | Member Price | Non-Member Price |
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Paper Abstract
The production of high quality optical devices based on porous silicon relies on having precise control over the refractive
index and thickness of each porous silicon layer. Until now this has been achieved by pre-calibrating each growth
system and making sure that parameters such as wafer doping, electrolyte concentration and temperature are kept constant
with each fabrication. However low doped silicon required for IR based silicon photonics has significant non-uniformity
in the index and growth rate during formation of the porous silicon. The solution we have developed is based on realtime
in-situ monitoring of low-doped silicon during porous silicon growth. This process rapidly measures the optical
interference between the porous silicon film and the backside silicon surface. The optical light source comes from six
coarse-wavelength-division-multiplexed lasers, with rapid switching between wavelengths achieved using a
microelectromechanical switch. The system permits rapid measurement (<1 sec) of the reflection spectra from all lasers,
enabling real-time thickness and refractive index of each layer to be determined during growth. Our aim is to enable
growth of high quality multi-layer films such as those required for Bragg Reflectors and high-Q Fabry-Perot microcavities.
In this paper we briefly describe the instrument, the numerical models developed to gather the measurements,
and show preliminary results gathered from this instrument during growth. The results show a good agreement with
theoretical optical modelling, and also direct measurements of the porous silicon layers.
Paper Details
Date Published: 30 December 2008
PDF: 9 pages
Proc. SPIE 7267, Smart Materials V, 72670R (30 December 2008); doi: 10.1117/12.817420
Published in SPIE Proceedings Vol. 7267:
Smart Materials V
Nicolas H. Voelcker; Helmut W. Thissen, Editor(s)
PDF: 9 pages
Proc. SPIE 7267, Smart Materials V, 72670R (30 December 2008); doi: 10.1117/12.817420
Show Author Affiliations
David Wyndham, The Univ. of Western Australia (Australia)
Tim James, The Univ. of Western Australia (Australia)
Gene Lim, The Univ. of Western Australia (Australia)
Tim James, The Univ. of Western Australia (Australia)
Gene Lim, The Univ. of Western Australia (Australia)
Gia Parish, The Univ. of Western Australia (Australia)
Charlie Musca, The Univ. of Western Australia (Australia)
Adrian Keating, The Univ. of Western Australia (Australia)
Charlie Musca, The Univ. of Western Australia (Australia)
Adrian Keating, The Univ. of Western Australia (Australia)
Published in SPIE Proceedings Vol. 7267:
Smart Materials V
Nicolas H. Voelcker; Helmut W. Thissen, Editor(s)
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