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Proceedings Paper

Extension of high-illumination level dynamic range for CMOS active pixel sensors
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Paper Abstract

In this paper, we present a wide dynamic range active pixel sensor (APS) using an external charge pump circuit. The proposed pixel exhibits improved dynamic range through the compensated threshold voltage of a reset MOSFET. We confirmed that the light level which is the saturated output voltage in the proposed APS is about 170,000 lux, which is 36% higher than that of a conventional APS. The proposed APS is fabricated by using 2-poly 4-metal 0.35 &mgr; standard CMOS process. The unit pixel consists of an n+ diffusion / p-substrate photodiode, three NMOSFETs and the charge pump circuit which consists of two NMOSFETs and two capacitors.

Paper Details

Date Published: 30 December 2008
PDF: 8 pages
Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72681T (30 December 2008); doi: 10.1117/12.816721
Show Author Affiliations
Min-Woong Seo, Kyungpook National Univ. (Korea, Republic of)
Sang-Ho Seo, Kyungpook National Univ. (Korea, Republic of)
Jang-Kyoo Shin, Kyungpook National Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7268:
Smart Structures, Devices, and Systems IV
Said Fares Al-Sarawi; Vijay K. Varadan; Neil Weste; Kourosh Kalantar-Zadeh, Editor(s)

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