
Proceedings Paper
EUV resist outgassing: scaling to HVM intensityFormat | Member Price | Non-Member Price |
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Paper Abstract
Typical extreme ultraviolet (EUV) photoresist is known to outgas carbon-containing molecules, which is of particular
concern to the industry as these molecules tend to contaminate optics and diminish reflectivity. This prompted extensive
work to measure these species and the quantities that they outgas in a vacuum environment. Experiments were
performed to test whether the outgassing rate of these carbon-containing molecules is directly proportional to the rate at
which the EUV photons arrive and whether a very high power exposure will cause the same amount of outgassing as a
much lower power exposure with the dose unchanged.
Paper Details
Date Published: 18 March 2009
PDF: 7 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727126 (18 March 2009); doi: 10.1117/12.816555
Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)
PDF: 7 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727126 (18 March 2009); doi: 10.1117/12.816555
Show Author Affiliations
Alin O. Antohe, Univ. at Albany (United States)
Chimaobi Mbanaso, Univ. at Albany (United States)
Yu-Jen Fan, Univ. at Albany (United States)
Leonid Yankulin, Univ. at Albany (United States)
Rashi Garg, Univ. at Albany (United States)
Chimaobi Mbanaso, Univ. at Albany (United States)
Yu-Jen Fan, Univ. at Albany (United States)
Leonid Yankulin, Univ. at Albany (United States)
Rashi Garg, Univ. at Albany (United States)
Petros Thomas, Univ. at Albany (United States)
Gregory Denbeaux, Univ. at Albany (United States)
Emil C. Piscani, SEMATECH, Inc. (United States)
Andrea F. Wuest, SEMATECH, Inc. (United States)
Gregory Denbeaux, Univ. at Albany (United States)
Emil C. Piscani, SEMATECH, Inc. (United States)
Andrea F. Wuest, SEMATECH, Inc. (United States)
Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)
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