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Proceedings Paper

Deterministic coupling of site-selected InAs/InP quantum dots to 2D photonic crystal microcavities
Author(s): Dan Dalacu; Danny Kim; Simon Frédérick; Jean Lapointe; Anthony J. Springthorpe; Philip J. Poole; Geof C. Aers; Robin L. Williams
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Paper Abstract

Site-selective epitaxy and standard electron beam lithography techniques are employed to spatially couple small InAs/InP quantum dot ensembles to 2D photonic crystal membrane cavities. The small InAs quantum dot ensembles, consisting of just a few dots, are localized to areas 100x100nm2 at predetermined positions dictated by a nanotemplate consisting of InP pyramids. The dots are embedded in a 2D membrane using a planarization growth step and single missing-hole defect cavities are fabricated in the membrane with the defect sites centered on the dot ensembles. This spatially couples the ensembles to the χ-dipole mode of the cavities. Emission from the cavities shows the expected mode structure, with quality factors of 2000.

Paper Details

Date Published: 24 February 2009
PDF: 6 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110H (24 February 2009); doi: 10.1117/12.816143
Show Author Affiliations
Dan Dalacu, National Research Council Canada (Canada)
Danny Kim, Naval Research Lab. (United States)
Simon Frédérick, Technische Univ. München (Germany)
Jean Lapointe, National Research Council Canada (Canada)
Anthony J. Springthorpe, National Research Council Canada (Canada)
Philip J. Poole, National Research Council Canada (Canada)
Geof C. Aers, National Research Council Canada (Canada)
Robin L. Williams, National Research Council Canada (Canada)

Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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