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Lattice vibrations study of In[sub]x[/sub]Ga[sub]1-x[/sub]As[sub]y[/sub]Sb[sub]1-y[/sub] quaternary alloys with low (In, As) content highly doped by tellurium grown by LPE
Author(s): J. Díaz-Reyes; E. López-Cruz; J. G. Mendoza-Alvarez
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Paper Abstract

The quaternary alloy InxGa1-xAsySb1-y highly doped with tellurium was grown on substrates of p-type GaSb in the direction (100) by liquid phase epitaxy (LPE). The longitudinal (LO) and transverse (TO) optical modes were obtained using the modified random-element iso-displacement model (MREI model). The comparison of the experimental results with obtained by the MREI model allows to confirm that the bands correspond to the modes associated LO and TO of the binary compounds GaAs and (GaSb + InAs).

Paper Details

Date Published: 2 December 2008
PDF: 6 pages
Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420R (2 December 2008); doi: 10.1117/12.815961
Show Author Affiliations
J. Díaz-Reyes, CIBA-IPN (Mexico)
E. López-Cruz, Instituto de Fisica Luis Rivera Terrazas (Mexico)
J. G. Mendoza-Alvarez, CIBA-IPN (Mexico)

Published in SPIE Proceedings Vol. 7142:
Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)
Janis Spigulis; Andris Krumins; Donats Millers; Andris Sternberg; Inta Muzikante; Andris Ozols; Maris Ozolinsh, Editor(s)

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