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Proceedings Paper

Evaluation of deep trap compensation ratio and recombination parameters by transient grating techniques
Author(s): A. Kadys; K. Jarasiunas; Ph. Delaye; D. Verstraeten
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Paper Abstract

We demonstrate a novel application of time-resolved transient grating technique for determination of deep trap occupation ratio in semi-insulating crystals. Light diffraction kinetics on a transient reflection grating with very small period (150 nm) provided conditions for studies of absorption nonlinearity and its discrimination from the coexisting free carrier and electro-optic ones. By numerical modeling of absorption grating kinetics in subnanosecond time domain, we determined the contributions of the recharged deep traps and two-photon absorption to diffraction kinetics and evaluated in this way the deep trap compensation ratio in differently grown GaAs crystals. Moreover, the decay time of the absorption grating provided the rate of carrier capture to these dominant deep traps, which have been recharged under illumination. Using this feature, we were able to monitor the thermal annealing process in vanadium-doped CdTe crystals: it has not effected the charge state of vanadium related deep traps, but reduced the concentration of the active residual carrier capture centers in the crystal.

Paper Details

Date Published: 2 December 2008
PDF: 6 pages
Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420O (2 December 2008); doi: 10.1117/12.815623
Show Author Affiliations
A. Kadys, Vilnius Univ. (Lithuania)
K. Jarasiunas, Vilnius Univ. (Lithuania)
Ph. Delaye, Lab. Charles Fabry de l’Institute (France)
D. Verstraeten, Univ. de Liège (Belgium)

Published in SPIE Proceedings Vol. 7142:
Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)
Janis Spigulis; Andris Krumins; Donats Millers; Andris Sternberg; Inta Muzikante; Andris Ozols; Maris Ozolinsh, Editor(s)

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