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Proceedings Paper

EUVL reticle defectivity evaluation
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Paper Abstract

Reticle defectivity was evaluated using two known approaches: direct reticle inspection and the inspection of the wafer prints. The primary test vehicle was a reticle with a design consisting of 45 nm and 60 nm comb and serpentine structures in different orientations. The reticle was inspected in reflected light on the KLA 587 in a die-todie and a die-to-database mode. Wafers were exposed on a 0.25 NA full-field EUV exposure tool and inspected on a KLA 2800. Both methods delivered two populations of defects which were correlated to identify coinciding detections and mismatches. In addition, reticle defects were reviewed using scanning electron microscopy (SEM) to assess the printability. Furthermore, some images of the defects found on the 45 nm reticle used in the previous study [1] were collected using actinic (EUV) microscopy. The results of the observed mask defects are presented and discussed together with a defect classification.

Paper Details

Date Published: 17 March 2009
PDF: 8 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727117 (17 March 2009); doi: 10.1117/12.815525
Show Author Affiliations
A. Tchikoulaeva, AMD Saxony LLC & Co. KG (Germany)
U. Okoroanyanwu, Advanced Micro Devices, Inc. (United States)
O. Wood, Advanced Micro Devices, Inc. (United States)
B. La Fontaine, Advanced Micro Devices, Inc. (United States)
C. Holfeld, Advanced Mask Technology Ctr. (Germany)
S. Kini, KLA-Tencor Corp. (United States)
M. Peikert, KLA-Tencor GmbH (Germany)
C. Boye, IBM Corp. (United States)
C.-S. Koay, IBM Corp. (United States)
K. Petrillo, IBM Corp. (United States)
H. Mizuno, Toshiba America Electronic Components, Inc. (United States)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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