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Proceedings Paper

Image reversal trilayer process using standard positive photoresist
Author(s): David J. Abdallah; John Sagan; Kazunori Kurosawa; Jin Li; Yusuke Takano; Yasuo Shimizu; Ninad Shinde; Tatsuro Nagahara; Tomonori Ishikawa; Ralph R. Dammel
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Paper Abstract

Conventional trilayer schemes alleviate the decreasing photoresist budgets as well as satisfy the antireflection issues associated with high NA imaging. However, a number of challenges still exist with standard trilayer processing, most notable among which is the lack of broad resist compatibility and trade-offs associated with improving Si content, such as stability and lithography performance. One way to circumvent these issues is to use a silicon hard mask coated over a photoresist image of reverse tone to the desired pattern. Feasibility of this image reversal trilayer process was demonstrated by patterning of trenches and contact holes in a carbon hard mask from line and pillar photoresist images, respectively. This paper describes the lithography, pattern transfer process and materials developed for the image reversal trilayer processing.

Paper Details

Date Published: 1 April 2009
PDF: 9 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732K (1 April 2009); doi: 10.1117/12.815149
Show Author Affiliations
David J. Abdallah, AZ Electronic Materials (United States)
John Sagan, AZ Electronic Materials (United States)
Kazunori Kurosawa, AZ Electronic Materials (Japan)
Jin Li, AZ Electronic Materials (Japan)
Yusuke Takano, AZ Electronic Materials (Japan)
Yasuo Shimizu, AZ Electronic Materials (Japan)
Ninad Shinde, AZ Electronic Materials (Japan)
Tatsuro Nagahara, AZ Electronic Materials (Japan)
Tomonori Ishikawa, AZ Electronic Materials (Japan)
Ralph R. Dammel, AZ Electronic Materials (United States)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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