
Proceedings Paper
Process variation aware OPC modeling for leading edge technology nodesFormat | Member Price | Non-Member Price |
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Paper Abstract
As the semiconductor industry moves to the 45nm node and beyond, the tolerable
lithography process window significantly shrinks due to the combined use of high NA
and low k1 factor. This is exacerbated by the fact that the usable depth of focus at 45nm
node for critical layer is 200nm or less. Traditional Optical Proximity Correction (OPC)
only computes the optimal pattern layout to optimize its lithography patterning at
nominal process condition (nominal defocus and nominal exposure dose) according to an
OPC model calibrated at this nominal condition, and this may put the post-OPC layout at
non-negligible patterning failure risk due to the inevitable process variation (mainly
defocus and dose variations). With a little sacrifice at the nominal condition, process
variation aware OPC can greatly enhance the robustness of post-OPC layout patterning in
the presence of defocus and dose variation. There is also an increasing demand for
through process window lithography verification for post-OPC circuit layout. The corner
stone for successful process variation aware OPC and lithography verification is an
accurately calibrated continuous process window model which is a continuous function
of defocus and dose. This calibrated model needs to be able to interpolate and extrapolate
in the usable process window.
Based on Synopsys' OPC modeling software package-ProGen and ProGenPlus, we
developed an automated process window (PW) modeling module, which can build
process variation aware process window OPC model with continuously adjustable
process parameters: defocus and dose. The calibration of this continuous PW model was
performed in a single calibration process using silicon measurement at nominal condition
and off-focus-off-dose conditions. Through the example of several process window
models for layers at 45nm technology nodes, we demonstrated that this novel continuous
PW modeling approach can achieve very good performance both at nominal condition
and at interpolated or extrapolated off-focus-off-dose conditions.
Paper Details
Date Published: 12 March 2009
PDF: 10 pages
Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72751J (12 March 2009); doi: 10.1117/12.815094
Published in SPIE Proceedings Vol. 7275:
Design for Manufacturability through Design-Process Integration III
Vivek K. Singh; Michael L. Rieger, Editor(s)
PDF: 10 pages
Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72751J (12 March 2009); doi: 10.1117/12.815094
Show Author Affiliations
Qiaolin Zhang, Synopsys, Inc. (United States)
Ebo Croffie, Synopsys, Inc. (United States)
Yongfa Fan, Synopsys, Inc. (United States)
Jianliang Li, Synopsys, Inc. (United States)
Ebo Croffie, Synopsys, Inc. (United States)
Yongfa Fan, Synopsys, Inc. (United States)
Jianliang Li, Synopsys, Inc. (United States)
Kevin Lucas, Synopsys, Inc. (United States)
Brad Falch, Synopsys, Inc. (United States)
Lawerence Melvin, Synopsys, Inc. (United States)
Brad Falch, Synopsys, Inc. (United States)
Lawerence Melvin, Synopsys, Inc. (United States)
Published in SPIE Proceedings Vol. 7275:
Design for Manufacturability through Design-Process Integration III
Vivek K. Singh; Michael L. Rieger, Editor(s)
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