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Proceedings Paper

Exposure tool settings and OPC strategies for EUV lithography at the 16-nm node
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Paper Abstract

The EUV exposure tool settings and OPC strategies to be used for the 16 nm logic node are discussed. Imaging simulation was done for various types of CD through pitch patterns to investigate the tradeoff between NA, illumination settings, and resist diffusion blur. EUV optics still provides very good optical resolution at 56 nm min pitch, but resist diffusion degrades imaging contrast significantly. The CD variations due to resist blur are relatively larger for EUV lithography than they are for 193 nm lithography, because of the high quality of the EUV lithography images. EUV shadowing effect and flare effect contribute additional CD variations, which need to be corrected and controlled. Nonetheless, a resist blur of about 15 nm FWHM or better provides adequate imaging performance even with current EUV optical settings of 0.25 NA and conventional illumination for 28 nm half-pitch applications. Experimental results show that state-of-art EUV resists have resist blur values close to this requirement, although their current performance is limited by resist material properties and processing conditions.

Paper Details

Date Published: 17 March 2009
PDF: 10 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727119 (17 March 2009); doi: 10.1117/12.814953
Show Author Affiliations
Yunfei Deng, GLOBALFOUNDRIES Inc. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Bruno La Fontaine, GLOBALFOUNDRIES Inc. (United States)
Tom Wallow, GLOBALFOUNDRIES Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Harry Levinson, GLOBALFOUNDRIES Inc. (United States)
Anita Fumar-Pici, Toshiba America Electronic Components, Inc. (United States)
Hiroyuki Mizuno, Toshiba America Electronic Components, Inc. (United States)
Chiew-seng Koay, IBM Corp. (United States)
Greg McIntyre, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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