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Proceedings Paper

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
Author(s): D. Zhu; C. McAleese; K. K. McLaughlin; M. Häberlen; C. O. Salcianu; E. J. Thrush; M. J. Kappers; W. A. Phillips; P. Lane; D. J. Wallis; T. Martin; M. Astles; S. Thomas; A. Pakes; M. Heuken; C. J. Humphreys
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Paper Abstract

The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device.

Paper Details

Date Published: 3 February 2009
PDF: 11 pages
Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 723118 (3 February 2009); doi: 10.1117/12.814919
Show Author Affiliations
D. Zhu, Univ. of Cambridge (United Kingdom)
C. McAleese, Univ. of Cambridge (United Kingdom)
K. K. McLaughlin, Univ. of Cambridge (United Kingdom)
M. Häberlen, Univ. of Cambridge (United Kingdom)
C. O. Salcianu, Univ. of Cambridge (United Kingdom)
E. J. Thrush, Univ. of Cambridge (United Kingdom)
M. J. Kappers, Univ. of Cambridge (United Kingdom)
W. A. Phillips, Univ. of Cambridge (United Kingdom)
P. Lane, QinetiQ (United Kingdom)
D. J. Wallis, QinetiQ (United Kingdom)
T. Martin, QinetiQ (United Kingdom)
M. Astles, QinetiQ (United Kingdom)
S. Thomas, Aixtron, Ltd. (United Kingdom)
A. Pakes, Aixtron, Ltd. (United Kingdom)
M. Heuken, Aixtron, Ltd. (United Kingdom)
C. J. Humphreys, Univ. of Cambridge (United Kingdom)

Published in SPIE Proceedings Vol. 7231:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu, Editor(s)

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