Computational lithography (CL) is becoming more and more of a fundamental enabler of advanced semiconductor processing technology, and new requirements for CL models are arising from new applications such as model-based process tuning. In this paper we study the impact of realistic machine parameters that can be incorporated in a modern CL model, and provide an experimental assessment of model improvements with respect to prediction of scanner tuning effects. The data demonstrates improved model accuracy and prediction by inclusion of scanner-type specific modeling capabilities and machine data in the CL model building process. In addition to scanner effects, we study laser bandwidth tuning effects and the accuracy of corresponding model predictions by comparison against experimental data. The data demonstrate that the models predict well wafer CD variations resulting from laser BW tuning. We also find that using realistic spectral density distribution of the laser can provide more accurate results than the commonly assumed modified Lorentzian line shape.

Date Published: 6 March 2009
PDF: 11 pages
Proc. SPIE 7274, Optical Microlithography XXII, 727405 (6 March 2009); doi: 10.1117/12.814644

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)