
Proceedings Paper
Correlation of experimental and simulated cure-induced photoresist distortions in double patterningFormat | Member Price | Non-Member Price |
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Paper Abstract
Numerous alternate processes are under industry-wide evaluation as simplifications to current double patterning
methods. Reduction in process complexity and cost may be achieved by use of photoresist stabilization methods that
eliminate one etch step by allowing a second resist to be patterned over the first resist pattern. Examples of stabilization
methods using numerous curing processes have been reported. At least some resist shrinkage during stabilization
appears to be generally observed for these methods. We evaluate the link between volumetric shrinkage and threedimensional
pattern distortion for a variety of resist geometries using experimental and simulation-based methods.
Experimental resists designed for double patterning using 172 nm UV resist curing were evaluated and showed
shrinkage of less than 10 percent. Several simplified metrology approaches for measuring shrinkage as well as inferring
shrinkage distortions were assessed. For top-down SEM measurements, elbow inner corner rounding measurements
appear to be a usefully robust method for estimating shrinkage distortion. Finite element analysis of resist structures
yields shrinkage distortions that are in good qualitative and quantitative agreement with experiments, and thus appears to
provide a provisionally general and useful method for predicting pattern distortions that arise during cure-based resist
stabilization methods used in double imaging.
Paper Details
Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727309 (1 April 2009); doi: 10.1117/12.814474
Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727309 (1 April 2009); doi: 10.1117/12.814474
Show Author Affiliations
Thomas I. Wallow, GlobalFoundries (United States)
Mahidhar Rayasam, GlobalFoundries (United States)
Masanori Yamaguchi, Ushio Inc. (Japan)
Yohei Yamada, Ushio Inc. (Japan)
Karen Petrillo, IBM Corp. (United States)
Mahidhar Rayasam, GlobalFoundries (United States)
Masanori Yamaguchi, Ushio Inc. (Japan)
Yohei Yamada, Ushio Inc. (Japan)
Karen Petrillo, IBM Corp. (United States)
Kenji Yoshimoto, GlobalFoundries (United States)
Jongwook Kye, GlobalFoundries (United States)
Ryoung-Han Kim, GlobalFoundries (United States)
Harry J. Levinson, GlobalFoundries (United States)
Jongwook Kye, GlobalFoundries (United States)
Ryoung-Han Kim, GlobalFoundries (United States)
Harry J. Levinson, GlobalFoundries (United States)
Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)
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