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Proceedings Paper

Analysis of a relation between the spatial frequency of electrostatic chuck and induced mask inplane distortion (IPD)
Author(s): Takeshi Yamamoto; Kazuya Ota; Naosuke Nishimura; Shin'ichi Warisawa; Sunao Ishihara
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Paper Abstract

Due to potential applications of Extreme Ultraviolet Lithography (EUVL) to 22 nm half-pitch (hp) generations, EUVL is well researched. However, current SEMI standards about the chuck are based on only the local slope of roughness. Herein chuck standards, which consider the spatial frequency of the chuck surface roughness as well as the local slope of the shape, are proposed by examining the chuck roughness. To prevent a mask pattern shift when an EUVL mask is clamped by an electrostatic chuck, the roughness height must be limited. Thus, the in-plane distortion (IPD) and out-of-plane distortion (OPD) are introduced to evaluate the mask pattern shift. This research utilizes ANSYS to evaluate the relationship between the spatial frequency of chuck roughness and IPD/OPD induced on the mask surface after an EUVL mask is clamped by the chuck. The IPD depends on the local slope of the surface roughness shape of the electrostatic chuck (ESC) as well as the spatial frequency of the roughness. Therefore, re-polishing the chuck surface can decrease IPD. Moreover, the spatial frequency of roughness must be considered when a mask pattern shift correction is performed according to the surface roughness shape of the EUVL mask and ESC.

Paper Details

Date Published: 18 March 2009
PDF: 8 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72713K (18 March 2009); doi: 10.1117/12.814451
Show Author Affiliations
Takeshi Yamamoto, The Univ. of Tokyo (Japan)
Kazuya Ota, Semiconductor Leading Edge Technologies, Inc. (Japan)
Naosuke Nishimura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shin'ichi Warisawa, The Univ. of Tokyo (Japan)
Sunao Ishihara, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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