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Proceedings Paper

Overcoming the challenges of 22-nm node patterning through litho-design co-optimization
Author(s): Martin Burkhardt; J. C. Arnold; Z. Baum; S. Burns; J. Chang; J. Chen; J. Cho; V. Dai; Y. Deng; S. Halle; G. Han; S. Holmes; D. Horak; S. Kanakasabapathy; R. H. Kim; A. Klatchko; C. S. Koay; A. Krasnoperova; Y. Ma; E. McLellan; K. Petrillo; S. Schmitz; C. Tabery; Y. Yin; L. Zhuang; Y. Zou; J. Kye; V. Paruchuri; S. Mansfield; C. Spence; M. Colburn
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Paper Abstract

Historically, lithographic scaling was driven by both improvements in wavelength and numerical aperture. Recently, the semiconductor industry completed the transition to 1.35NA immersion lithography. The industry is now focusing on double patterning techniques (DPT) as a means to circumvent the limitations of Rayleigh diffraction. Here, the IBM Alliance demonstrates the extendibility of several double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. This paper details a set of solutions that have enabled early 22 nm learning through careful lithography-design optimization.

Paper Details

Date Published: 16 March 2009
PDF: 8 pages
Proc. SPIE 7274, Optical Microlithography XXII, 727404 (16 March 2009); doi: 10.1117/12.814433
Show Author Affiliations
Martin Burkhardt, IBM Research (United States)
J. C. Arnold, IBM Research (United States)
Z. Baum, IBM SRDC (United States)
S. Burns, IBM Research (United States)
J. Chang, IBM Research (United States)
J. Chen, IBM Research (United States)
J. Cho, Advanced Micro Devices, Inc. (United States)
V. Dai, Advanced Micro Devices, Inc. (United States)
Y. Deng, Advanced Micro Devices, Inc. (United States)
S. Halle, IBM SRDC (United States)
G. Han, IBM SRDC (United States)
S. Holmes, IBM SRDC (United States)
D. Horak, IBM SRDC (United States)
S. Kanakasabapathy, IBM Research (United States)
R. H. Kim, Advanced Micro Devices, Inc. (United States)
A. Klatchko, Freescale Corp. (United States)
C. S. Koay, IBM SRDC (United States)
A. Krasnoperova, IBM SRDC (United States)
Y. Ma, Advanced Micro Devices, Inc. (United States)
E. McLellan, IBM SRDC (United States)
K. Petrillo, IBM SRDC (United States)
S. Schmitz, IBM SRDC (United States)
C. Tabery, Advanced Micro Devices, Inc. (United States)
Y. Yin, IBM SRDC (United States)
L. Zhuang, IBM SRDC (United States)
Y. Zou, Advanced Micro Devices, Inc. (United States)
J. Kye, Advanced Micro Devices, Inc. (United States)
V. Paruchuri, IBM Research (United States)
S. Mansfield, IBM SRDC (United States)
C. Spence, Advanced Micro Devices, Inc. (United States)
M. Colburn, IBM Research (United States)

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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