Proceedings Paper
Demonstration of 32nm half-pitch electrical testable NAND FLASH patterns using self-aligned double patterning| Format | Member Price | Non-Member Price |
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Paper Abstract
Self-Aligned Double patterning (SADP) technology has been identified as the main stream patterning technique for
NAND FLASH manufacturers for 3xnm and beyond. This paper demonstrates the successful fabrication of 32nm halfpitch
electrical testable NAND FLASH wordline structures using a 3-mask flow. This 3-mask flow includes one critical
lithography step and two non-critical lithography steps. It uses a positive tone (spacer as mask) approach to create 32nm
doped poly wordlines. Electrical measurements of line resistance are performed on these doped poly wordlines to
demonstrate the capability of this patterning technique. Detailed results and critical process considerations, including
lithography, deposition and etch, will be discussed in this paper.
Paper Details
Date Published: 16 March 2009
PDF: 7 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72740D (16 March 2009); doi: 10.1117/12.814403
Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)
PDF: 7 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72740D (16 March 2009); doi: 10.1117/12.814403
Show Author Affiliations
Shiyu Sun, Applied Materials, Inc. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)
Huixiong Dai, Applied Materials, Inc. (United States)
Man-Ping Cai, Applied Materials, Inc. (United States)
Jaklyn Jin, Applied Materials, Inc. (United States)
Pokhui Blanco, Applied Materials, Inc. (United States)
Liyan Miao, Applied Materials, Inc. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)
Huixiong Dai, Applied Materials, Inc. (United States)
Man-Ping Cai, Applied Materials, Inc. (United States)
Jaklyn Jin, Applied Materials, Inc. (United States)
Pokhui Blanco, Applied Materials, Inc. (United States)
Liyan Miao, Applied Materials, Inc. (United States)
Ping Xu, Applied Materials, Inc. (United States)
Xumou Xu, Applied Materials, Inc. (United States)
James Yu, Applied Materials, Inc. (United States)
Raymond Hung, Applied Materials, Inc. (United States)
Shiany Oemardani, Applied Materials, Inc. (United States)
Osbert Chan, Applied Materials, Inc. (United States)
Chorng-Ping Chang, Applied Materials, Inc. (United States)
Chris Ngai, Applied Materials, Inc. (United States)
Xumou Xu, Applied Materials, Inc. (United States)
James Yu, Applied Materials, Inc. (United States)
Raymond Hung, Applied Materials, Inc. (United States)
Shiany Oemardani, Applied Materials, Inc. (United States)
Osbert Chan, Applied Materials, Inc. (United States)
Chorng-Ping Chang, Applied Materials, Inc. (United States)
Chris Ngai, Applied Materials, Inc. (United States)
Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)
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