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Proceedings Paper

Process-induced bias: a study of resist design, device node, illumination conditions, and process implications
Author(s): Michael Carcasi; Steven Scheer; Carlos Fonseca; Tsuyoshi Shibata; Hitoshi Kosugi; Yoshihiro Kondo; Takashi Saito
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Paper Abstract

Critical dimension uniformity (CDU) has both across field and across wafer components. CD error generated by across wafer etching non-uniformity and other process variations can have a significant impact on CDU. To correct these across wafer systematic variations, compensation by exposure dose and/or post exposure bake (PEB) temperature have been proposed. These compensation strategies often focus on a specific structure without evaluating how process compensation impacts the CDU of all structures to be printed in a given design. In one previous study limited to a single resist and minimal coater/developer and scanner variations, the authors evaluated the relative merits of across wafer dose and PEB temperature compensation on the process induced CD bias and CDU. For the process studied, it was found that using PEB temperature to control CD across wafer was preferable to using dose compensation. In another previous study, the impact of resist design was explored to understand how resist design, as well as coater/developer and scanner processing, impact process induced bias (PIB). The previous PIB studies were limited to a single illumination case and explore the effect of PIB on only L/S structures. It is the goal of this work to understand additionally how illumination design and mask design, as well as resist design and coater/developer and scanner processing, impact process induced bias (PIB)/OPC integrity.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730N (1 April 2009); doi: 10.1117/12.814395
Show Author Affiliations
Michael Carcasi, Tokyo Electron America, Inc. (United States)
Steven Scheer, Tokyo Electron America, Inc. (United States)
Carlos Fonseca, Tokyo Electron America, Inc. (United States)
Tsuyoshi Shibata, Tokyo Electron Kyushu Ltd. (Japan)
Hitoshi Kosugi, Tokyo Electron Kyushu Ltd. (Japan)
Yoshihiro Kondo, Tokyo Electron Kyushu Ltd. (Japan)
Takashi Saito, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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