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Proceedings Paper

A CDU comparison of double patterning process options using Monte Carlo simulation
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Paper Abstract

Determination of the optimal double patterning scheme depends on cost, integration complexity, and performance. This paper will compare the overall CDU performance of litho-etch-litho-etch (LELE) versus a spacer approach. The authors use Monte Carlo simulation as a way to rigorously account for the effect of each contributor to the overall CD variation of the double patterning process. Monte Carlo simulation has been applied to determine CD variations in previous studies1-2, but this paper will extend the methodology into double patterning using a calibrated resist model with topography.

Paper Details

Date Published: 16 March 2009
PDF: 9 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72741U (16 March 2009); doi: 10.1117/12.814332
Show Author Affiliations
Josh Hooge, Tokyo Electron America (United States)
Shinichi Hatakeyama, Tokyo Electron Kyushu, Ltd. (Japan)
Kathleen Nafus, Tokyo Electron Kyushu, Ltd. (Japan)
Steven Scheer, Tokyo Electron America (United States)
Philippe Foubert, IMEC (Belgium)
Shaunee Cheng, IMEC (Belgium)
Philippe Leray, IMEC (Belgium)

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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