Share Email Print

Proceedings Paper

Assessment of EUV resist readiness for 32-nm hp manufacturing and extendibility study of EUV ADT using state-of-the-art resist
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-32 nm features. We have assessed EUVL resist readiness for 32 nm half-pitch (HP) manufacturing, presenting process feasibility data such as resolution, depth of focus (DOF), line edge roughness/line width roughness (LER/LWR), mask error enhancement factor (MEEF), resist collapse, critical dimension (CD) uniformity, post-exposure delay (PED) stability, and post-exposure bake (PEB) sensitivity. Using the alpha demo tool (ADT), a full field ASML EUV scanner, we demonstrate the feasibility of a k1 ~0.593 resist process for 32 nm HP line/space (L/S) patterning. Exposure latitude (EL) was 13% at best focus, and DOF was 160 nm at best dose using a 60 nm thick resist. By incorporating a spin-on underlayer, the process margin could be improved to 18.5% EL and 200 nm DOF. We also demonstrate ADT extendibility using a state-of-the-art EUV platform. A k1 ~0.556 resist process was demonstrated for 30 nm HP L/S patterns, providing a 13% EL, 160 nm DOF, and a common process window with isolated lines. 28 nm HP patterning for a k1 ~0.528 resist process could be feasible using a more advanced resist with improved DOF and resist collapse margin.

Paper Details

Date Published: 17 March 2009
PDF: 11 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727124 (17 March 2009);
Show Author Affiliations
Chawon Koh, SEMATECH, Inc. (United States)
Liping Ren, SEMATECH, Inc. (United States)
Jacque Georger, SEMATECH, Inc. (United States)
Frank Goodwin, SEMATECH, Inc. (United States)
Stefan Wurm, SEMATECH, Inc. (United States)
Bill Pierson, ASML US, Inc. (United States)
Joo-On Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Tom Wallow, Advanced Micro Devices, Inc. (United States)
Todd R. Younkin, Intel Corp. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?