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Proceedings Paper

Estimation of cost comparison of lithography technologies at the 22-nm half-pitch node
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Paper Abstract

The cost of ownership (CoO) of candidate technologies for 22 nm half-pitch lithography is calculated. To more accurately compare technologies with different numbers of process steps, a model that includes deposition, etching, metrology, and other costs is created. For 22 nm half-pitch nodes, extreme ultraviolet lithography (EUVL) has a significant cost advantage over other technologies under certain mask cost assumptions. Double patterning, however, may be competitive under worst-case EUVL mask cost assumptions. Sensitivity studies of EUVL CoO to throughput and uptime show EUVL may be cost-competitive at lower uptime and throughput conditions. Finally, calculation of the CoO of 450 mm lithography shows that the expected cost reduction is between 0% and 15%.

Paper Details

Date Published: 17 March 2009
PDF: 10 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72710Y (17 March 2009); doi: 10.1117/12.814255
Show Author Affiliations
Andrea Wüest, SEMATECH, Inc. (United States)
Andrew J. Hazelton, Nikon Corp. (Japan)
Greg Hughes, SEMATECH, Inc. (United States)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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