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Proceedings Paper

Underlayer designs to enhance the performance of EUV resists
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Paper Abstract

Extreme ultraviolet (EUV) lithography has gained momentum as the method of choice for <32-nm half-pitch device fabrication. In this paper, we describe our initial attempts to increase an EUV resist's sensitivity without compromising resolution and line roughness via introduction of a thermally crosslinkable underlayer. The main purpose is to test the possibility of using a combination of photoacid generators (PAGs) and EUV sensitizers (phenol type) in the underlayer designs to enhance the overall performance of EUV resists. We have demonstrated the possible benefits of adding an EUV underlayer into the regular EUV litho stack and investigated the effect of PAG types and loadings on the photospeed and litho performance of three different EUV resists.

Paper Details

Date Published: 1 April 2009
PDF: 11 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731J (1 April 2009); doi: 10.1117/12.814223
Show Author Affiliations
Hao Xu, Brewer Science, Inc. (United States)
James M. Blackwell, Intel Corp., LBNL Molecular Foundry (United States)
Todd R. Younkin, Intel Corp. (United States)
Ke Min, Intel Corp., LBNL Molecular Foundry (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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