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Proceedings Paper

Enabling process window improvement at 45nm and 32nm with free-form DOE illumination
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Paper Abstract

We present a method for optimizing a free-form illuminator implemented using a diffractive optical element (DOE). The method, which co-optimizes the source and mask taking entire images of circuit clips into account, improves the common process-window and 2-D image fidelity. We compare process-windows for optimized standard and free-form DOE illuminations for arrays and random placements of contact holes at the 45 nm and 32 nm nodes. Source-mask cooptimization leads to a better-performing source compared to source-only optimization. We quantify the effect of typical DOE manufacturing defects on lithography performance in terms of NILS and common process-window.

Paper Details

Date Published: 16 March 2009
PDF: 11 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72740B (16 March 2009); doi: 10.1117/12.814215
Show Author Affiliations
Tamer H. Coskun, Cadence Design Systems, Inc. (United States)
Apo Sezginer, Cadence Design Systems, Inc. (United States)
Vishnu Kamat, Cadence Design Systems, Inc. (United States)
Michiel Kruger, Cadence Design Systems, Inc. (United States)
Bayram Yenikaya, Cadence Design Systems, Inc. (United States)
James Carriere, Tessera (United States)
Jared Stack, Tessera (United States)
Marc Himel, Tessera (United States)

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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