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Proceedings Paper

Through-focus pattern matching applied to double patterning
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Paper Abstract

A fast-CAD method for evaluating through-focus interaction among features is developed based on dual layout convolution kernels derived and tested for accuracy in predicting intensity changes. The model is derived by extending the Taylor series expansion for OPD to include a quadratic term, resulting in not only the usual pattern match factor Z3 for defocus, but also match factors for Z0 and Z8. The model is tested through-focus on a logic layout and the predicted intensity change versus the actual intensity change through-focus is graphed. Results for basic case near coherent illumination show an R2 of 0.92. Generalization to use only two patterns instead of three is shown to work well for line ends, with an R2 of 0.96.

Paper Details

Date Published: 16 March 2009
PDF: 11 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72741A (16 March 2009); doi: 10.1117/12.814190
Show Author Affiliations
Juliet Rubinstein, Univ. of California, Berkeley (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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