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Molecular glass resists for next-generation lithography
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Paper Abstract

The semiconductor industry is pushing the limits of resolution to sub-30nm through the extension of 193nm lithography as well as next generation techniques such as EUV lithography. Molecular glass photoresists may provide enhanced resolution and performance advantages compared to traditional polymeric resists. These organic compounds have a low molecular weight but still display high glass transition temperatures (Tgs). Enhanced design aspects are employed to give beneficial resist properties such as transparency, high Tg and etch resistance. Asymmetrical, rigid structures are used to create amorphous structures with high Tg molecular glasses, such as branched structures and carborane inclusion complexes. Alicyclic cyclodextrin ring compounds have also been employed for 193nm lithography. Unconventional atoms such as boron have been incorporated to increase etch resistance while supercritical CO2 was employed as an environmentally friendly solvent free developer. Exploring structural aspects and their effect on resist performance is important in the design of new molecules for next generation lithography and will be discussed.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732N (1 April 2009); doi: 10.1117/12.814147
Show Author Affiliations
Marie Krysak, Cornell Univ. (United States)
Anuja De Silva, Cornell Univ. (United States)
Jing Sha, Cornell Univ. (United States)
Jin-Kyun Lee, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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