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Proceedings Paper

Measuring the EUV-induced contamination rates of TiO2-capped multilayer optics by anticipated production-environment hydrocarbons
Author(s): S. B. Hill; N. S. Faradzhev; C. S. Tarrio; T. B. Lucatorto; R. A. Bartynski; B. V. Yakshinskiy; T. E. Madey
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Paper Abstract

The primary, publicly reported cause of optic degradation in pre-production extreme-ultraviolet (EUV) lithography systems is carbon deposition. This results when volatile organics adsorb onto optic surfaces and then are cracked by EUV-induced reactions. Hence the deposition rate depends on the adsorption-desorption kinetics of the molecule-surface system as well as the basic photon-stimulated reaction rates, both of which may vary significantly for different organic species. The goal of our ongoing optics-contamination program is to estimate the contamination rate of species expected in the tool environment by exposing samples to in-band 13.5 nm light from our synchrotron in the presence of fixed partial pressures of admitted gases. Here we report preliminary results of contamination rates on TiO2-capped samples for species observed in resist-outgassing measurements (benzene, isobutene, toluene and tert-butylbenzene) in the pressure range (10-6 to 10-4) Pa which all display an unexpected logarithmic dependence on pressure. This scaling is in agreement with previous EUV exposures of other species at NIST as well as independent measurements of coverage performed at Rutgers University. These results are consistent with a molecular desorption energy that decreases with coverage due to molecular interactions (Temkin model). Use of the proper scaling law is critical when estimating optic lifetimes by extrapolating over the 3-to-6 orders of magnitude between accelerated-testing and tool-environment partial pressures.

Paper Details

Date Published: 17 March 2009
PDF: 11 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727113 (17 March 2009); doi: 10.1117/12.814111
Show Author Affiliations
S. B. Hill, National Institute of Standards and Technology (United States)
N. S. Faradzhev, Rutgers Univ. (United States)
C. S. Tarrio, National Institute of Standards and Technology (United States)
T. B. Lucatorto, National Institute of Standards and Technology (United States)
R. A. Bartynski, Rutgers Univ. (United States)
B. V. Yakshinskiy, Rutgers Univ. (United States)
T. E. Madey, Rutgers Univ. (United States)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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