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Proceedings Paper

Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process
Author(s): Hiroshi Arima; Yuichi Yoshida; Kosuke Yoshihara; Tsuyoshi Shibata; Yuki Kushida; Hiroki Nakagawa; Yukio Nishimura; Yoshikazu Yamaguchi
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Paper Abstract

Residue type defect is one of yield detractors in lithography process. It is known that occurrence of the residue type defect is dependent on resist development process and the defect is reduced by optimized rinsing condition. However, the defect formation is affected by resist materials and substrate conditions. Therefore, it is necessary to optimize the development process condition by each mask level. Those optimization steps require a large amount of time and effort. The formation mechanism is investigated from viewpoint of both material and process. The defect formation is affected by resist material types, substrate condition and development process condition (D.I.W. rinse step). Optimized resist formulation and new rinse technology significantly reduce the residue type defect.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727333 (1 April 2009); doi: 10.1117/12.814034
Show Author Affiliations
Hiroshi Arima, Tokyo Electron Kyushu Ltd. (Japan)
Yuichi Yoshida, Tokyo Electron Kyushu Ltd. (Japan)
Kosuke Yoshihara, Tokyo Electron Kyushu Ltd. (Japan)
Tsuyoshi Shibata, Tokyo Electron Kyushu Ltd. (Japan)
Yuki Kushida, JSR Corp. (Japan)
Hiroki Nakagawa, JSR Corp. (Japan)
Yukio Nishimura, JSR Corp. (Japan)
Yoshikazu Yamaguchi, JSR Corp. (Japan)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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