
Proceedings Paper
Incident angle change caused by different off-axis illumination in extreme ultraviolet lithographyFormat | Member Price | Non-Member Price |
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Paper Abstract
Extreme ultraviolet lithography (EUVL) is believed to be possible patterning technology which can make 22 nm
and below. EUV uses a reflective mask so that the mask is shined with the oblique incident light. Thus, the study of
incident angle effect is very important. Currently, 6 degree oblique incidence is main stream, but 5 degree incident angle
is also studied for 0.25 NA. Incident angles larger than 6 degree are also considered for larger NA. This incident angle
will affect many things, eventually to the line width. Shadow effect also strongly depends on the incident angle. This
shadow effect in the EUVL mask is an important factor that decreases the contrast of the aerial image and causes a
directional problem, thus it will make line width variation. The off-axis illumination (OAI) will be used with
conventional on-axis illumination to make much smaller patterns. This OAI will split the main beam and change the
incident angle. We found that if the incident angle increased with higher degree of coherence, the aerial image went
worse. The CD difference between the horizontal and the vertical pattern is also dependent on the degree of coherence
even though it is small.
Paper Details
Date Published: 18 March 2009
PDF: 11 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727143 (18 March 2009); doi: 10.1117/12.814031
Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)
PDF: 11 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727143 (18 March 2009); doi: 10.1117/12.814031
Show Author Affiliations
Eun-Jin Kim, Hanyang Univ. (Korea, Republic of)
Jee-Hye You, Hanyang Univ. (Korea, Republic of)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jee-Hye You, Hanyang Univ. (Korea, Republic of)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Ilsin An, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
Ilsin An, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)
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