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Proceedings Paper

32nm node device laser-bandwidth OPE sensitivity and process matching
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Paper Abstract

For 32 nm Node Logic Device, we studied the effect of laser bandwidth variation on Optical Proximity Effect (OPE) by investigating through-pitch critical dimension (CD) performance. Our investigation evaluated CD performance with and without the application of Sub-resolution Assist Features (SRAF). These results enabled us to determine the Iso-Dense Bias (IDB), and sensitivity to laser bandwidth, for both SRAF and no-SRAF cases, as well as the impact on Process Window. From the IDB results we present the required laser bandwidth stability in order to maintain OPE variation within CD Budget tolerances. We also introduce OPE matching results between different generation Immersion Lithography exposure tools evaluated for 45nm Node Logic Device.

Paper Details

Date Published: 16 March 2009
PDF: 11 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72742Q (16 March 2009); doi: 10.1117/12.813987
Show Author Affiliations
Kazuyuki Yoshimochi, NEC Electronics Corp. (Japan)
Takao Tamura, NEC Electronics Corp. (Japan)
Takaaki Kuribayashi, NEC Electronics Corp. (Japan)
Takayuki Uchiyama, NEC Electronics Corp. (Japan)
Nigel Farrar, Cymer, Inc. (United States)
Toshihiro Oga, Cymer, Inc. (United States)
James Bonafede, Cymer Japan, Inc. (Japan)

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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