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Proceedings Paper

Optimization of droplets for UV-NIL using coarse-grain simulation of resist flow
Author(s): Vadim Sirotkin; Alexander Svintsov; Sergey Zaitsev
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Paper Abstract

A mathematical model and numerical method are described, which make it possible to simulate ultraviolet ("step and flash") nanoimprint lithography (UV-NIL) process adequately even using standard Personal Computers. The model is derived from 3D Navier-Stokes equations with the understanding that the resist motion is largely directed along the substrate surface and characterized by ultra-low values of the Reynolds number. By the numerical approximation of the model, a special finite difference method is applied (a coarse-grain method). A coarse-grain modeling tool for detailed analysis of resist spreading in UV-NIL at the structure-scale level is tested. The obtained results demonstrate the high ability of the tool to calculate optimal dispensing for given stamp design and process parameters. This dispensing provides uniform filled areas and a homogeneous residual layer thickness in UV-NIL.

Paper Details

Date Published: 17 March 2009
PDF: 9 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72712I (17 March 2009); doi: 10.1117/12.813959
Show Author Affiliations
Vadim Sirotkin, Institute of Microelectronics Technology (Russian Federation)
Alexander Svintsov, Institute of Microelectronics Technology (Russian Federation)
Sergey Zaitsev, Institute of Microelectronics Technology (Russian Federation)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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