Share Email Print

Proceedings Paper

In-die registration metrology on future-generation reticles
Author(s): Klaus-Dieter Roeth; Frank Laske; Hiroshi Kinoshita; Daisuke Kenmochi; Karl-Heinrich Schmidt; Dieter Adam
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Today, mask metrology is performed on dedicated registration test patterns in the kerf area between active dies. Accordingly, the measurement performance of the actual registration metrology system on these test patterns is very well characterized. However, it is commonly understood that with the introduction of reticles for the 32nm technology node, the overlay requirements will become more stringent and therefore reticles need to be characterized in greater detail. In order to achieve the tighter overlay performance targets on the wafer, registration metrology on the mask is expected to include "active" structures in the die. There will be more of an emphasis on In-Die metrology if Double Patterning Lithography (DPL) will finally become the technology of choice for the 32nm lithography. Measurement results are obtained on state-of-the-art registration metrology tools on test reticles simulating metrology in the dense active array. These data are analyzed and compared with results achieved on test reticles using standard registration test patterns.

Paper Details

Date Published: 23 March 2009
PDF: 7 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72722W (23 March 2009); doi: 10.1117/12.813944
Show Author Affiliations
Klaus-Dieter Roeth, KLA-Tencor (Germany)
Frank Laske, KLA-Tencor (Germany)
Hiroshi Kinoshita, HOYA Corp. (Japan)
Daisuke Kenmochi, HOYA Corp. (Japan)
Karl-Heinrich Schmidt, KLA-Tencor (Germany)
Dieter Adam, KLA-Tencor (Germany)

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?