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Proceedings Paper

Hole inspection technology using Fourier imaging method
Author(s): Kiminori Yoshino; Kenji Tsuchiya; Yuuichiro Yamazaki; Makoto Oote; Koichiro Shibayama; Akitoshi Kawai; Kazumasa Endo
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Paper Abstract

There are two kinds of critical dimension (CD) management tools; CD-SEM and Optical CD (OCD). OCD is preferable to other existing measurement tools, because of its higher throughput and lower photoresist damage. We have developed an Automated Pattern profile Management (APM) systems based on the OCD concept. For the monitoring thin line, APM detects light intensity from an optical system consisting of a polarizer and an analyzer set in a cross- Nicol configuration as a polarization fluctuation. This paper reports our development of monitoring technology for hole. In the case of hole management, APM detects light intensity from diffraction intensity fluctuation. First of all, the best conditions for hole management were designed from simulations. The best conditions were off-axis aperture and S polarizer. In our evaluation of wafers without underlayer, we obtained a good correlation with CD-SEM value. From the simulation, we consider the APM system to be very effective for shrinking hole process management of the next generation from the simulation.

Paper Details

Date Published: 23 March 2009
PDF: 8 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723H (23 March 2009); doi: 10.1117/12.813634
Show Author Affiliations
Kiminori Yoshino, Toshiba Corp. (Japan)
Kenji Tsuchiya, Toshiba Corp. (Japan)
Yuuichiro Yamazaki, Toshiba Corp. (Japan)
Makoto Oote, Toshiba Corp. (Japan)
Koichiro Shibayama, Toshiba Corp. (Japan)
Akitoshi Kawai, Nikon Corp. (Japan)
Kazumasa Endo, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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