
Proceedings Paper
Design of resist stacks with antireflection coatings from the viewpoint of focus budgetFormat | Member Price | Non-Member Price |
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Paper Abstract
Liquid immersion lithography tools with NA=1.3 are being applied for hp4x node device and beyond. As the typical
DOF has been reduced to 100 nm or less for this hyper-NA exposure, precise consideration of the error factors that lead
to DOF reduction is required. The BFD (Best Focus Difference between pattern kinds) induced by resist stack is one of
the error factors yet to be solved. In this work, the BFD induced by resist stack was studied through simulation and
experiment by decomposing it into the following three components: One induced by the "refraction" effect, one induced
by the "reflection" effect and one induced by the "process" effect. Each BFD was evaluated by simulation to make a
BFD budget. Experimental verification was also performed, which confirmed BFD of 25 nm and it was found that over
30 % of the observed BFD was induced owing to resist stack. Based on this result, we discuss a method for controlling
the BFD by utilizing projection lens aberration and review the design flow of resist stacks with antireflection coatings.
Paper Details
Date Published: 16 March 2009
PDF: 10 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72741H (16 March 2009); doi: 10.1117/12.813367
Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)
PDF: 10 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72741H (16 March 2009); doi: 10.1117/12.813367
Show Author Affiliations
Satoshi Nagai, Toshiba Corp. Semiconductor Co. (Japan)
Kazuya Sato, Toshiba Corp. Semiconductor Co. (Japan)
Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)
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