Proceedings Paper
THz emission from coherent plasmons in InAs nanowires| Format | Member Price | Non-Member Price |
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Paper Abstract
We report the first observation of coherent plasmon emission of THz radiation from arrays of semiconductor
nanowires. The THz signal strength from InAs nanowires is comparable to a planar substrate, indicating the
nanowires are highly efficient emitters. This is explained by the preferential orientation of plasma motion to
the wire surface, which overcomes radiation trapping by total-internal reflection. Using a bulk Drude model,
we identify the average donor density and mobility in the nanowires in a non-contact manner. Contact IV
transconductance measurements provide order of magnitude agreement with values obtained from the THz
spectra.
Paper Details
Date Published: 6 February 2009
PDF: 6 pages
Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140Y (6 February 2009); doi: 10.1117/12.810875
Published in SPIE Proceedings Vol. 7214:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)
PDF: 6 pages
Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140Y (6 February 2009); doi: 10.1117/12.810875
Show Author Affiliations
D. V. Seletskiy, The Univ. of New Mexico (United States)
M. P. Hasselbeck, The Univ. of New Mexico (United States)
M. Sheik-Bahae, The Univ. of New Mexico (United States)
M. P. Hasselbeck, The Univ. of New Mexico (United States)
M. Sheik-Bahae, The Univ. of New Mexico (United States)
J. G. Cederberg, Sandia National Labs. (United States)
A. A. Talin, Sandia National Labs. (United States)
A. A. Talin, Sandia National Labs. (United States)
Published in SPIE Proceedings Vol. 7214:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)
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