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Proceedings Paper

Low-temperature processing of PZT thin films by 2.45 GHz microwave heating
Author(s): Z. J. Wang; Y. Otsuka; Z. Cao; M. W. Zhu; N. Yoshikawa; H. Kokawa
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Paper Abstract

The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(ZrxTi1-x)O3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO2/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450°C showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. The average remanent polarization and coercive field of the PZT films are approximately 21 µC/cm2 and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

Paper Details

Date Published: 19 December 2008
PDF: 8 pages
Proc. SPIE 7267, Smart Materials V, 726702 (19 December 2008); doi: 10.1117/12.810604
Show Author Affiliations
Z. J. Wang, Institute of Metal Research (China)
Y. Otsuka, Tohoku Univ. (Japan)
Z. Cao, Tohoku Univ. (Japan)
M. W. Zhu, Institute of Metal Research (China)
N. Yoshikawa, Tohoku Univ. (Japan)
H. Kokawa, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 7267:
Smart Materials V
Nicolas H. Voelcker; Helmut W. Thissen, Editor(s)

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