Proceedings Paper
1220 nm mode-locked GaInNAs disk laser| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
We report a passively mode-locked optically pumped semiconductor disk laser with emission at 1220 nm. Both the gain
and the semiconductor saturable absorber mirrors used to build the laser are based on InGaAsN/GaAs quantum wells
fabricated by molecular beam epitaxy. The growth parameters have been optimized to reduce the detrimental effects of
nitrogen on the emission efficiency. Using a gain mirror comprising ten GaInNAs quantum wells with a relatively low
nitrogen content and a saturable absorber mirror incorporating two GaInNAs quantum wells, we demonstrate generation
of pulses with durations of ~5ps and average powers up to 275mW. We describe the fabrication procedure of the
semiconductor structures and the results of laser characterization.
Paper Details
Date Published: 28 February 2009
PDF: 7 pages
Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719316 (28 February 2009); doi: 10.1117/12.810555
Published in SPIE Proceedings Vol. 7193:
Solid State Lasers XVIII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)
PDF: 7 pages
Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719316 (28 February 2009); doi: 10.1117/12.810555
Show Author Affiliations
Mircea Guina, Tampere Univ. of Technology (Finland)
Jussi Rautiainen, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Jussi Rautiainen, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Janne Puustinen, Tampere Univ. of Technology (Finland)
Oleg Okhotnikov, Tampere Univ. of Technology (Finland)
Oleg Okhotnikov, Tampere Univ. of Technology (Finland)
Published in SPIE Proceedings Vol. 7193:
Solid State Lasers XVIII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)
© SPIE. Terms of Use
