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Proceedings Paper

1220 nm mode-locked GaInNAs disk laser
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Paper Abstract

We report a passively mode-locked optically pumped semiconductor disk laser with emission at 1220 nm. Both the gain and the semiconductor saturable absorber mirrors used to build the laser are based on InGaAsN/GaAs quantum wells fabricated by molecular beam epitaxy. The growth parameters have been optimized to reduce the detrimental effects of nitrogen on the emission efficiency. Using a gain mirror comprising ten GaInNAs quantum wells with a relatively low nitrogen content and a saturable absorber mirror incorporating two GaInNAs quantum wells, we demonstrate generation of pulses with durations of ~5ps and average powers up to 275mW. We describe the fabrication procedure of the semiconductor structures and the results of laser characterization.

Paper Details

Date Published: 28 February 2009
PDF: 7 pages
Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719316 (28 February 2009); doi: 10.1117/12.810555
Show Author Affiliations
Mircea Guina, Tampere Univ. of Technology (Finland)
Jussi Rautiainen, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Janne Puustinen, Tampere Univ. of Technology (Finland)
Oleg Okhotnikov, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 7193:
Solid State Lasers XVIII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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