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Proceedings Paper

Wet anisotropic etching by TMAH with NCW-1002 surfactant on crystalline silicon surface
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Paper Abstract

Paper reports the use of a new surfactant NCW-1002 as an addictive in TMAH wet anisotropic etching to improve the etching characteristic on three silicon principle planes (i.e. (100), (110), (111) planes). Concentrations of TMAH from 2.5% to 10% with addition of various concentration of NCW-1002 are studied to find an optimal combination for a improved smoothness and etch selectivity between (100) and (110) planes, which is necessary for the formation of 45°mirror plane (110) in (100) silicon surface. Etch rate and roughness of silicon planes were measured by Dektak II and AFM respectively. Besides, this paper will explain the formation of 45°slope. By improving the selectivity or extending the etching depth, we are able to enlarge the 45°portion on the mirror surface.

Paper Details

Date Published: 30 December 2008
PDF: 9 pages
Proc. SPIE 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV, 72690U (30 December 2008); doi: 10.1117/12.810451
Show Author Affiliations
Yi Wei Xu, Univ. of New South Wales (Australia)
Aron Michael, Univ. of New South Wales (Australia)
Chee Yee Kwok, Univ. of New South Wales (Australia)

Published in SPIE Proceedings Vol. 7269:
Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV
Jung-Chih Chiao; Alex J. Hariz; David V. Thiel; Changyi Yang, Editor(s)

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