Vertical III-V compound semiconductor nanowires grown on Si(111) surfaces have been attracting interest for application to opto-electronic integrated circuits (OEICs). In nanowire growth, heterostructures in the axial and radial direction can be obtained by combining different materials with different growth conditions. These effects should make it possible to fabricate complicated and functional three-dimensional structures in a bottom-up manner. These advances should lead to new types of nanodevices. We describe the formation of several heterostructures using GaP-based nanowires on Si(111). The catalysts used were Au particles obtained from Au colloids. We obtained GaP/GaAs/GaP nanowires bent at thinned GaAs nodes, InP egg-like structures in GaP nanowires, core-multishell Ga(In)P/GaAs(or air-gap)/ GaP nanowires with flat tops, and GaAs/AlInAs capped GaInAs nanowires for long-wavelength photon emission. These structures were successively grown on vertical GaP nanowires on Si(111) substrates.

Date Published: 17 February 2009
PDF: 10 pages
Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240E (17 February 2009); doi: 10.1117/12.810448

Published in SPIE Proceedings Vol. 7224:
Quantum Dots, Particles, and Nanoclusters VI
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)