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Proceedings Paper

InGaAs communication photodiodes: from low to high power level designs
Author(s): M. Achouche
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Paper Abstract

While InGaAs absorption material has been used for various applications up to 1.6μm wavelength, specific designs for low level detection have become of main interest using high responsivity and low dark current detectors. By adding an avalanche multiplication layer to form an avalanche photodiode (APD) using the Separated Absorption and Multiplication (SAM) structure, one can take advantage of the very low noise properties of multiplication process in large bandgap Al(Ga)(In)As material to improve receiver sensitivity by >10dB. Under high power level injection, specific PIN structures have been developed to improve space charge effects as needed for power applications such as microwave analog photonic links. Specific designs to achieve simultaneously broad bandwidth, high responsivity, very high power saturation and high linearity will be discussed.

Paper Details

Date Published: 26 January 2009
PDF: 7 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72221D (26 January 2009); doi: 10.1117/12.810232
Show Author Affiliations
M. Achouche, Alcatel-Thales III-V Lab. (France)

Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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