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Proceedings Paper

Pt/anodized TiO2/SiC-based MOS device for hydrocarbon sensing
Author(s): M. Shafiei; A. Z. Sadek; Jerry C. W. Yu; R. Arsat; K. Kalantar-Zadeh; X. F. Yu; J. G. Partridge; W. Wlodarski
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Paper Abstract

Pt/anodized TiO2/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and characterized for their sensitivity towards propene (C3H6). Titanium (Ti) thin films were deposited onto the SiC substrates using a filtered cathodic vacuum arc (FCVA) method. Fluoride ions containing neutral electrolyte (0.5 wt% NH4F in ethylene glycol) were used to anodize the Ti films. The anodized films were subsequently annealed at 600 °C for 4 hrs in an oxygen rich environment to obtain TiO2. The current-voltage (I-V) characteristics of the Pt/TiO2/SiC devices were measured in different concentrations of propene. Exposure to the analyte gas caused a change in the Schottky barrier height and hence a lateral shift in the I-V characteristics. The effective change in the barrier height for 1% propene was calculated as 32.8 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 157 mV was measured at 620°C during exposure to 1% propene.

Paper Details

Date Published: 30 December 2008
PDF: 8 pages
Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72680K (30 December 2008); doi: 10.1117/12.810108
Show Author Affiliations
M. Shafiei, RMIT Univ. (Australia)
A. Z. Sadek, RMIT Univ. (Australia)
Jerry C. W. Yu, RMIT Univ. (Australia)
R. Arsat, RMIT Univ. (Australia)
K. Kalantar-Zadeh, RMIT Univ. (Australia)
X. F. Yu, Shanghai Institute of Ceramics (China)
J. G. Partridge, RMIT Univ. (Australia)
W. Wlodarski, RMIT Univ. (Australia)

Published in SPIE Proceedings Vol. 7268:
Smart Structures, Devices, and Systems IV
Said Fares Al-Sarawi; Vijay K. Varadan; Neil Weste; Kourosh Kalantar-Zadeh, Editor(s)

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