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Proceedings Paper

High d/gamma values in diode laser structures for very high power
Author(s): I. B. Petrescu-Prahova; P. Modak; E. Goutain; D. Silan; D. Bambrick; J. Riordan; T. Moritz; S. D. McDougall; B. Qiu; J. H. Marsh
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Paper Abstract

Record values for the rollover power and rollover linear power densities of 9xx nm devices, obtained by simultaneous scaling of length and d/Γ, are reported. The values for d/Γ lay in the range 0.8 μm to 1.2 μm with corresponding cavity lengths from 3.5 mm to 5 mm. The transversal structures were asymmetric, with a higher refractive index on the n side. An optical trap was helpful in reducing the radiation extension on the p side and the overall thickness. The highest rollover linear power densities were 244 mW/μm for structures without an optical trap and 290 mW/μm for those that included an optical trap

Paper Details

Date Published: 23 February 2009
PDF: 8 pages
Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71981I (23 February 2009); doi: 10.1117/12.810041
Show Author Affiliations
I. B. Petrescu-Prahova, Intense US (United States)
P. Modak, Intense US (United States)
E. Goutain, Intense US (United States)
D. Silan, Intense US (United States)
D. Bambrick, Intense US (United States)
J. Riordan, Intense US (United States)
T. Moritz, Intense US (United States)
S. D. McDougall, Intense UK (United Kingdom)
B. Qiu, Intense UK (United Kingdom)
J. H. Marsh, Intense UK (United Kingdom)

Published in SPIE Proceedings Vol. 7198:
High-Power Diode Laser Technology and Applications VII
Mark S. Zediker, Editor(s)

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