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Proceedings Paper

Quantum well design and diffraction efficiency of quantum well light emitting diode
Author(s): Milad Khoshnegar; Amin Eftekharian; Majid Sodagar; Sina Khorasani; Ali Adibi
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Paper Abstract

In this work, a GaN-based quantum well LED is theoretically analyzed in a multi-layer structure composed of a quantum well embedded in a waveguide core surrounded by photonic crystal slab and a sapphire substrate. The electromagnetic eigenmodes are obtained throughout above structure via revised plane wave-scattering matrix method. The omnidirectional transmission and reflection are investigated for both TE and TM polarizations from diffraction channels in Ewald construction. Then, we introduced angular power density and calculated radiative modes extraction efficiency. All structural parameters, such as lattice geometry, lattice constant, photonic crystal thickness and filling factor, are taken into account. We also investigated the coupling efficiency between waveguide modes and Bloch modes in structure which include decomposed emission and extraction regions. In order to design a quantum well white LED, we used a MQW with adjusted material composition. The photoluminescence spectrum for both TE and TM polarizations is obtained through a combination of k.p perturbation and transfer matrix method.

Paper Details

Date Published: 16 February 2009
PDF: 12 pages
Proc. SPIE 7223, Photonic and Phononic Crystal Materials and Devices IX, 722311 (16 February 2009); doi: 10.1117/12.809480
Show Author Affiliations
Milad Khoshnegar, Sharif Univ. of Technology (Iran, Islamic Republic of)
Amin Eftekharian, Sharif Univ. of Technology (Iran, Islamic Republic of)
Majid Sodagar, Sharif Univ. of Technology (Iran, Islamic Republic of)
Sina Khorasani, Sharif Univ. of Technology (Iran, Islamic Republic of)
Ali Adibi, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7223:
Photonic and Phononic Crystal Materials and Devices IX
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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