We present a high-temperature single-photon source based on a CdSe quantum dot in a ZnSe nanowire. The nanowires have been grown by Molecular Beam Epitaxy in the Vapour-Liquid-Solid growth mode. We utilized a two-step growth process, where a thin, defect free ZnSe nanowire on a top of a nanoneedle is grown. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe an intense and highly polarized photoluminescence. Efficient photon anti-bunching was observed up to 220 K, while conserving a normalized anti-bunching dip of at most 36%.

Date Published: 18 February 2009
PDF: 9 pages
Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240U (18 February 2009); doi: 10.1117/12.809244

Published in SPIE Proceedings Vol. 7224:
Quantum Dots, Particles, and Nanoclusters VI
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)