In Germany, InAs/GaSb superlattice detector technology for the mid-wavelength infrared spectral range has been intensively developed in recent years. Mid-IR InAs/GaSb superlattice photodiodes achieve a very high quantum efficiency. The world's first high-performance infrared imagers based on InAs/GaSb superlattices were realized offering high spatial and excellent thermal resolution at short integration times. Additionally, the technology for dual-color superlattice detectors featuring simultaneous, pixel-registered detection of two separate spectral regimes in the mid-IR has been developed. Due to the ability to detect signatures of hot carbon dioxide, dual-color superlattice detectors are ideally suited for missile alerting sensors. The capability for small volume production of InAs/GaSb superlattice detectors has been established.

Date Published: 26 January 2009
PDF: 13 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220T (26 January 2009); doi: 10.1117/12.809045

Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)