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Proceedings Paper

Self-phase modulation of mid-infrared femtosecond pulses in semiconductor materials
Author(s): Satoshi Ashihara; Yusuke Kawahara
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Paper Abstract

Coherent spectral expansion of the mid-infrared femtosecond pulses is beneficial for monitoring and controlling molecular vibrational dynamics. We investigate the spectral broadening of mid-infrared pulses due to nonlinear optical effects in semiconductor materials. The mid-infrared pulses of 100 fs duration and 180 cm-1 bandwidth at the center wavelength of about 5 micron are focused onto the semiconductor materials. With only few-micro-joule pulse energy, the spectral broadening by a factor of more than 3 is observed for Si, Ge, and GaAs. The output spectral component extends from 1500 cm-1 to 3000 cm-1. The intensity and the phase profiles of the self-phase modulated pulses are characterized by the modified auto-interferometric autocorrelation method and its phase-retrieval algorithm, indicating the spectral phase to be compensated for pulse compression.

Paper Details

Date Published: 23 February 2009
PDF: 8 pages
Proc. SPIE 7197, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VIII, 719719 (23 February 2009); doi: 10.1117/12.808906
Show Author Affiliations
Satoshi Ashihara, Tokyo Univ. of Agriculture and Technology (Japan)
Japan Science and Technology Agency (Japan)
Yusuke Kawahara, Tokyo Univ. of Agriculture and Technology (Japan)

Published in SPIE Proceedings Vol. 7197:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VIII
Peter E. Powers, Editor(s)

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