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Proceedings Paper

Interference lithography processes with high-power laser pulses
Author(s): A. Rodriguez; M. Ellman; I. Ayerdi; N. Perez; S. M. Olaizola; J. Zhang; Z. Ji; T. Berthou; C. S. Peng; Y. K. Verevkin; Z. Wang
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Paper Abstract

Laser interference lithography (LIL) is concerned with the use of interference patterns generated from two or several coherent beams of laser radiation for the structuring of materials. This paper presents the work on the processes based on resists and direct writing with laser interference lithography. In the work, a four-beam laser interference system was used as a submicrometer structuring tool in which a high-energy pulsed, frequency-tripled and TM polarized Nd:YAG laser (355 nm) with a coherent length of 3 m, energy power up to 320 mJ/cm2, pulse duration of 8 ns and 10 Hz repetition rate was used as a light source. The experimental results were achieved with 2-beam and 4-beam interference patterning. The processes can be used to define submicron surface relieves in large areas for use in the field of MEMS.

Paper Details

Date Published: 24 February 2009
PDF: 8 pages
Proc. SPIE 7201, Laser Applications in Microelectronic and Optoelectronic Manufacturing VII, 72010R (24 February 2009); doi: 10.1117/12.808834
Show Author Affiliations
A. Rodriguez, Univ. of Navarra (Spain)
M. Ellman, Univ. of Navarra (Spain)
I. Ayerdi, Univ. of Navarra (Spain)
N. Perez, Univ. of Navarra (Spain)
S. M. Olaizola, Univ. of Navarra (Spain)
J. Zhang, Cardiff Univ. (United Kingdom)
Z. Ji, Cardiff Univ. (United Kingdom)
T. Berthou, Tampere Univ. of Technology (Finland)
C. S. Peng, SILIOS Technologies SA (France)
Y. K. Verevkin, Institute of Applied Physics (Russian Federation)
Z. Wang, Cardiff Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 7201:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VII
Michel Meunier; Andrew S. Holmes; Hiroyuki Niino; Bo Gu, Editor(s)

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