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Proceedings Paper

Highly reliable high speed 1.1um-InGaAs/GaAsP-VCSELs
Author(s): H. Hatakeyama; T. Anan; T. Akagawa; K. Fukatsu; N. Suzuki; K. Tokutome; M. Tsuji
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Paper Abstract

In this paper, we describe high temperature operation of high speed 1.1μm-range oxide-confined vertical-cavity surfaceemitting lasers (VCSELs) for optical interconnection applications. For achieving high speed of over 25 Gbit/s under a high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs via accelerated life tests. The result showed extremely long MTTF lifetime of about 10 thousand hours under an ambient temperature of 150°C and a bias current of about 19 kA/cm2, a reliability that either equals or surpasses that of conventional 850-nm VCSELs with 10 Gbit/s. Moreover, we revealed a typical failure mode of the device; the result of analysis indicated that the failure was caused by <110> dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.

Paper Details

Date Published: 6 February 2009
PDF: 10 pages
Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722902 (6 February 2009); doi: 10.1117/12.808717
Show Author Affiliations
H. Hatakeyama, NEC Corp. (Japan)
T. Anan, NEC Corp. (Japan)
T. Akagawa, NEC Corp. (Japan)
K. Fukatsu, NEC Corp. (Japan)
N. Suzuki, NEC Corp. (Japan)
K. Tokutome, NEC Corp. (Japan)
M. Tsuji, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 7229:
Vertical-Cavity Surface-Emitting Lasers XIII
Kent D. Choquette; Chun Lei, Editor(s)

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