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Proceedings Paper

GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors
Author(s): X. Ni; R. Shimada; T. D. Kang; J. Leach; Ü. Özgür; H. Morkoç
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Paper Abstract

We report on GaN-based vertical cavities on highly reflective and crack-free 40.5 pair of AlGaN/GaN distributed Bragg reflectors (DBRs) by using a selective growth method to avoid wafer cracking that is commonly observed in conventional planar Al(Ga)N/GaN DBRs. An Al0.46Ga0.54N/GaN DBR with ~ 98% reflectivity was selectively grown with square patterns of up to 150 × 150 μm2 in size, which were separated from each other by 10 μm wide SiO2 mask stripes. Vertical cavity structures employing InGaN/InGaN multiple quantum wells (MQWs) were grown on these crackfree patterned DBRs and capped with 13 pair SiO2/SiNx DBRs to complete the full cavity structure. A cavity mode at ~ 442 nm in 150 × 150 μm2 area was observed, having a quality factor of ~300. The selective growth technique to eliminate crack formation is very promising for the fabrication of nitride-based vertical-cavity surface emitting laser devices.

Paper Details

Date Published: 19 February 2009
PDF: 6 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162F (19 February 2009); doi: 10.1117/12.807902
Show Author Affiliations
X. Ni, Virginia Commonwealth Univ. (United States)
R. Shimada, Virginia Commonwealth Univ. (United States)
T. D. Kang, Virginia Commonwealth Univ. (United States)
J. Leach, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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