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Proceedings Paper

1/f noise in single-walled carbon nanotube films
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Paper Abstract

We use Monte Carlo simulations and modeling to study the 1/f noise in CNT films as a function of device parameters and film resistivity. We consider noise sources due to both tube-tube junctions and nanotubes themselves. By comparing the simulation results with experimental data, we find that the noise generated by tube-tube junctions dominates the total CNT film 1/f noise. We then systematically study the effect of device length, device width and film thickness on the 1/f noise scaling in CNT films. Our results show that the noise amplitude depends strongly on device dimensions and on the film resistivity, following a power-law relationship near the percolation threshold. Despite its relative simplicity, our computational approach explains the experimentally observed 1/f noise scaling in CNT films. Since 1/f noise is a more sensitive measure of percolation than resistivity, these simulations will help improve the performance of CNT film sensors at the micro-nano interface, where noise is an important figure of merit.

Paper Details

Date Published: 23 February 2009
PDF: 11 pages
Proc. SPIE 7204, Micromachining and Microfabrication Process Technology XIV, 72040J (23 February 2009); doi: 10.1117/12.807407
Show Author Affiliations
Ashkan Behnam, Univ. of Florida (United States)
Gijs Bosman, Univ. of Florida (United States)
Ant Ural, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 7204:
Micromachining and Microfabrication Process Technology XIV
Mary-Ann Maher; Jung-Chih Chiao; Paul J. Resnick, Editor(s)

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