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Proceedings Paper

Angular spectrum tailoring in solid immersion microscopy
Author(s): S. B. Ippolito; P. Song; D. L. Miles; J. D. Sylvestri
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Paper Abstract

We present a technique that involves tailoring the angular spectrum in optical microscopy of silicon integrated circuits, with a solid immersion lens. Spatial light modulation to select only supercritical light at the substrate/dielectric interface, yields only evanescent and scattered light in the interconnect layers. We demonstrated the technique in optical excitation microscopy of 65nm silicon-on-insulator circuits, which enabled localization of a fault during microprocessor development. Acquiring images with and without angular spectrum tailoring allowed longitudinal localization of the electrical response to optical excitation. Lateral registration of electrical response and confocal reflection images to the circuit layout was also significantly improved.

Paper Details

Date Published: 6 February 2009
PDF: 8 pages
Proc. SPIE 7227, Complex Light and Optical Forces III, 722708 (6 February 2009); doi: 10.1117/12.806545
Show Author Affiliations
S. B. Ippolito, IBM Semiconductor Research and Development Ctr. (United States)
P. Song, IBM T.J. Watson Research Ctr. (United States)
D. L. Miles, IBM Semiconductor Research and Development Ctr. (United States)
J. D. Sylvestri, IBM Semiconductor Research and Development Ctr. (United States)

Published in SPIE Proceedings Vol. 7227:
Complex Light and Optical Forces III
Enrique J. Galvez; David L. Andrews; Jesper Glückstad, Editor(s)

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